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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV27 DESCRIPTION *With TO-220C package *Low collector saturation voltage *Fast switching speed APPLICATIONS *For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 240 120 7 12 20 4 6 85 175 -65~175 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV27 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IE=50mA; IC=0 IC=4A ;IB=0.4 A IC=8A; IB=0.8A IC=8A; IB=0.8A VCE =240V;VBE = -1.5 V TC=125 VEB=5V; IC=0 120 V Emitter-base breakdown voltage 7 30 V Collector-emitter saturation voltage 0.7 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 2 V Collector cut-off current 1 mA Emitter cut-off current 1 mA Switching times resistive load ton ts tf Turn-on time IC=8A;IB1=0.8A;VCC=90V VBE = - 6V;RBB = 3.75D 0.4 0.8 ms Storage time 0.5 1.2 s Fall time 0.12 0.25 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV27 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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